Nanoelectronics Mastery Quiz – Hard Level
A demanding set of six multiple‑choice items probing cutting‑edge concepts in nano‑scale electronic engineering.
Quiz Questions
Answer all questions below and test your knowledge.
- 1
Which phenomenon enables electrons to cross a potential barrier thinner than 5 nm in a MOSFET channel at low temperature?
- 2
In a graphene nanoribbon field‑effect transistor, what primarily determines the bandgap magnitude?
- 3
Which material is currently the most promising for achieving sub‑10 nm gate dielectrics with high κ value?
- 4
What is the principal advantage of using a single‑electron transistor for low‑power logic?
- 5
Spin‑orbit coupling in a topological insulator surface state leads to which effect in nanoelectronic interconnects?
- 6
When scaling a nanowire FET to a diameter of 2 nm, which issue becomes most critical for device variability?
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